Auggie2k
January 29th, 2006, 06:04 AM
Chip maker Intel yesterday announced that it has produced what it believes to be the first fully functional SRAM (static random access memory) chips using 45nm process technology. Intel said that it is currently on track to manufacture chips using this technology by 2007. Intel currently manufactures semiconductors using 65nm process technology. The company currently has 65nm facilities in Arizona and Oregon, with one in Ireland and another in Oregon due to begin chip production this year.
The 45nm SRAM chip, which has more than a billion transistors, is expected to have more than five times less leakage power than current chips, improving battery life for mobile devices and allowing developers to build smaller and more powerful platforms.
These initial 45nm developments are underway at Intel’s D1D facility in Oregon, but the main manufacturing centres using the 45nm process technology will be Fab 32 in Arizona and Fab 28 in Israel, the company said.
The 45nm SRAM chip, which has more than a billion transistors, is expected to have more than five times less leakage power than current chips, improving battery life for mobile devices and allowing developers to build smaller and more powerful platforms.
These initial 45nm developments are underway at Intel’s D1D facility in Oregon, but the main manufacturing centres using the 45nm process technology will be Fab 32 in Arizona and Fab 28 in Israel, the company said.